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VBPW34S Datasheet, PDF (1/8 Pages) Vishay Siliconix – Silicon PIN Photodiode
VBPW34S, VBPW34SR
Vishay Semiconductors
Silicon PIN Photodiode
VBPW34S
VBPW34SR
21733
DESCRIPTION
VBPW34S and VBPW34SR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 7.5 mm2 sensitive area
detecting visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
VBPW34S
Ira (µA)
55
VBPW34SR
55
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 65
± 65
λ0.1 (nm)
430 to 1100
430 to 1100
ORDERING INFORMATION
ORDERING CODE
VBPW34S
VBPW34SR
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
PACKAGE FORM
Gullwing
Reverse gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
VR
60
PV
215
Junction temperature
Tj
100
Operating temperature range
Tamb
- 40 to + 100
Storage temperature range
Tstg
- 40 to + 100
Soldering temperature
Acc. reflow solder profile fig. 8
Tsd
260
Thermal resistance junction/ambient
RthJA
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Document Number: 81128
Rev. 1.1, 20-Apr-10
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
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