VB60170G-E3_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com
VB60170G-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.50 V at I_F = 5 A
TMBS ^®
TO-263AB
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VB60170G
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 30 A
T_J max.
Package
2 x 30 A
170 V
210 A
0.72 V
175 °C
TO-263AB
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_FSM
dV/dt
T_J, T_STG
VB60170G
170
60
30
210
10 000
-40 to +175
UNIT
V
A
A
V/μs
°C
Revision: 11-Sep-13
1
Document Number: 89950
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000