VB60100C-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Low forward voltage drop, low power losses

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VB60100C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.36 V at I_F = 5 A
TMBS ^®
TO-263AB
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
VB60100C
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
Package
TO-263AB
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 30 A
T_J max.
Diode variation
2 x 30 A
100 V
320 A
0.66 V
150 °C
Common cathode
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
T_J, T_STG
VB60100C
100
60
30
320
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Revision: 15-May-13
1
Document Number: 87988
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000