VB30150C-M3_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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VB30150C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.56 V at I_F = 5.0 A
TMBS ^®
TO-263AB
K
2
1
VB30150C
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
Package
TO-263AB
I_F(AV)
2 x 15 A
V_RRM
150 V
I_FSM
140 A
V_F at I_F = 15 A
T_J max.
0.71 V
150 °C
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
I_FSM
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
VB30150C
150
30
15
140
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
per diode ⁽¹⁾
Reverse current per diode ⁽²⁾
I_F = 5.0 A
I_F = 7.5 A
T_A = 25 °C
I_F = 15 A
I_F = 5.0 A
V_F
I_F = 7.5 A
T_A = 125 °C
I_F = 15 A
V_R = 100 V
V_R = 150 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
I_R
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
TYP.
0.72
0.81
1.11
0.56
0.61
0.71
1.5
2
-
4
MAX.
-
-
1.36
-
-
0.79
-
-
200
20
UNIT
V
μA
mA
μA
mA
Revision: 22-May-13
1
Document Number: 87995
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000