VB20150S-M3_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

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VB20150S-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.55 V at I_F = 5.0 A
TMBS ^®
TO-263AB
K
A
NC
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization
for definitions of compliance please see
www.vishay.com/doc?99912
VB20150S
NC
K
A
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
Package
TO-263AB
I_F(AV)
V_RRM
I_FSM
20 A
150 V
160 A
V_F at I_F = 20 A
0.75 V
T_J max.
Diode variations
150 °C
Single die
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
V_RRM
I_F(AV)
I_FSM
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
VB20150S
150
20
160
10 000
-55 to +150
UNIT
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
I_F = 5.0 A
I_F = 10 A
T_A = 25 °C
Instantaneous forward voltage
per diode ⁽¹⁾
I_F = 20 A
I_F = 5.0 A
V_F
I_F = 10 A
T_A = 125 °C
I_F = 20 A
Reverse current per diode ⁽²⁾
V_R = 100 V
V_R = 150 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
I_R
0.69
0.84
1.15
0.55
0.64
0.75
2
2.5
-
5
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
1.43
-
-
0.82
-
-
250
25
UNIT
V
μA
mA
μA
mA
Revision: 30-Jun-14
1
Document Number: 87994
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000