V8P10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

New Product
V8P10
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.466 V at I_F = 4 A
TMBS^® eSMP^TM Series
FEATURES
• Very low profile - typical height of 1.1 mm
K
• Ideal for automated placement
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F at I_F = 8 A
T_j max.
8A
100 V
150 A
100 mJ
0.582 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy
at I_AS = 2.0 A, L = 50 mH, T_j = 25 °C
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
E_AS
dv/dt
T_J, T_STG
V8P10
V810
100
8
150
100
10000
- 40 to + 150
UNIT
V
A
A
mJ
V/µs
°C
Document Number: 89005
Revision: 26-Jun-07
www.vishay.com
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