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V6WL45C_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier | |||
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www.vishay.com
V6WL45C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 3 A
TMBS®
TO-252 (D-PAK)
K
A
FEATURES
⢠Trench MOS Schottky technology
⢠Ideal for automated placement
⢠Low forward voltage drop, low power losses
⢠High efficiency operation
⢠Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
⢠Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
V6WL45C
A
K
A
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 3 A (TA = 125 °C)
TJ max.
Package
2x3A
45 V
80 A
0.34 V
150 °C
TO-252 (D-PAK)
Diode variation
Single
MECHANICAL DATA
Case: TO-252 (D-PAK)ï
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102ï
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified currentï
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
V6WL45C
45
6
3
80
- 40 to + 150
UNIT
V
A
A
°C
Revision: 02-Aug-13
1
Document Number: 89968
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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