V60D100C Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V60D100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.36 V at I_F = 5 A
TMBS ^® eSMP^® Series
SMPD
K
1
2
Top View
Bottom View
V60D100C
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 30 A
V_RRM
100 V
I_FSM
320 A
V_F at I_F = 30 A (T_A = 125 °C)
0.66 V
T_J max.
150 °C
MECHANICAL DATA
Case: SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I_FSM
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
V60D100C
100
60
30
320
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Revision: 14-Mar-13
1
Document Number: 87952
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000