V60120C Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A

New Product
V60120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.41 V at I_F = 5 A
TMBS ^®
TO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
PIN 1
PIN 3
3
2
1
PIN 2
CASE
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 30 A
T_J max.
2 x 30 A
120 V
300 A
0.71 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
per device
per diode
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse current per diode at t_p = 2 µs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
SYMBOL
V_RRM
I_F(AV)
I_FSM
I_RRM
dV/dt
T_J, T_STG
V60120C
120
60
30
300
1.0
10 000
- 40 to + 150
UNIT
V
A
V/µs
°C
Document Number: 88976 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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