V50100P Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V50100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.372 V at I_F = 5 A
Major Ratings and Characteristics
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 20 A
T_J max.
2 x 25 A
100 V
250 A
0.64 V
150 °C
TO-247AD (TO-3P)
PIN 1
PIN 3
3
2
1
PIN 2
CASE
Features
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency inverters, switching power
supplies, freewheeling diodes, Oring diode, dc-to-dc
converters and reverse battery protection.
Mechanical Data
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs Maximum
Maximum Ratings
(T_A = 25 °C unless otherwise specified)
Parameter
Symbol
V50100P
Unit
Maximum repetitive peak reverse voltage
V_RRM
100
V
RMS reverse voltage for sine wave
V_RMS
70
V
DC blocking voltage
V_R
100
V
Maximum average forward rectified current
per device
I_F(AV)
50
A
(see Fig. 1)
per leg
25
Peak forward surge current 8.3 ms single half
per leg
sine-wave superimposed on rated load
I_FSM
250
A
Peak repetitive reverse current per leg
at t_p = 2 µs, 1 kHz
I_RRM
1.0
A
Operating junction and storage temperature range
T_J, T_STG
- 20 to + 150
°C
Document Number 88929
01-Dec-05
www.vishay.com
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