V40PW10C Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V40PW10C
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.44 V at I_F = 5 A
TMBS^® eSMP^® Series
K
1
2
SlimDPAK
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
40 A
V_RRM
I_FSM
100 V
240 A
V_F at I_F = 20 A (T_A = 125 °C)
0.70 V
T_J max.
Package
150 °C
SlimDPAK
Diode variation
Dual common cathode
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: SlimDPAK
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV) ⁽¹⁾
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Operating junction and storage temperature range
T_J, T_STG
Note
(1) _{With infinite heat sink}
V40PW10C
V40PW10C
100
40
20
240
-40 to +150
UNIT
V
A
A
A
°C
Revision: 21-Dec-15
1
Document Number: 87656
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000