V40120C_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V40120C, VF40120C, VB40120C, VI40120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.43 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
V40120C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF40120C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB40120C
PIN 1
K
PIN 2
HEATSINK
VI40120C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 20 A
T_J max.
Package
2 x 20 A
120 V
250 A
0.63 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum




MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy 
at T_J = 25 °C, L = 100 mH per diode
Peak repetitive reverse current at t_p = 2 μs, 1 kHz, 
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_FSM
E_AS
I_RRM
dV/dt
T_J, T_STG
V40120C
VF40120C VB40120C
120
40
20
250
180
0.5
10 000
- 40 to + 150
VI40120C
UNIT
V
A
A
mJ
A
V/μs
°C
Revision: 16-Aug-13
1
Document Number: 88937
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000