V40120C Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40120C, VB40120C & VI40120C
New Product _{Vishay General Semiconductor}
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.423 V at I_F = 5 A
TO-220AB
TO-262AA
K
FEATURES
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
V40120C
PIN 1
PIN 2
PIN 3
CASE
3
2
1
VI40120C
3
2
1
PIN 1
PIN 2
PIN 3
K
TO-263AB
K
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder Dip 260 °C, 40 seconds (for TO-220 &
TO-262 package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
1
VB40120C
PIN 1
K
PIN 2
HEATSINK
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 20 A
T_j max.
2 x 20 A
120 V
250 A
0.630 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, TO-262AA & TO263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40120C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(see Fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per diode
I_FSM
Peak repetitive reverse current per diode at t_p = 2 µs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_RRM
dv/dt
T_J, T_STG
VB40120C
120
40
20
250
1.0
10000
- 20 to + 150
VI40120C
UNIT
V
A
A
A
V/µs
°C
Document Number 88937
22-Aug-06
www.vishay.com
1