V40100PG Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40100PG
New Product _{Vishay General Semiconductor}
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.420 V at I_F = 5 A
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
FEATURES
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 20 A
T_j max.
2 x 20 A
100 V
250 A
0.67 V
150 °C
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs Maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified (see Fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Peak repetitive reverse current per diode at t_p = 2 µs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_RRM
dv/dt
T_J, T_STG
V40100PG
100
40
20
250
1.0
10000
- 40 to + 150
UNIT
V
A
A
A
V/µs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
at I_R = 1.0 mA T_J = 25 °C
V_(BR)
100 (minimum)
at I_F = 5 A
I_F = 10 A T_J = 25 °C
Instantaneous forward voltage ⁽¹⁾ per
diode
I_F = 20 A
at I_F = 5 A
V_F
I_F = 10 A T_J = 125 °C
I_F = 20 A
0.490
0.572
0.731
0.42
0.50
0.67
MAX.
-
-
-
0.81
-
-
0.73
UNIT
V
V
Document Number 88972
18-Aug-06
www.vishay.com
1