V40100C_12 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS barrier Schottky Rectifier

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New Product
V40100C, VB40100C, VI40100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS barrier Schottky Rectifier
Ultra Low V_F = 0.38 V at I_F = 5 A
TMBS ^®
TO-220AB
V40100C
PIN 1
3
2
1
PIN 2
PIN 3
TO-263AB
K
CASE
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, TO-263AB and TO-262AA
package)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
1
VB40100C
PIN 1
K
PIN 2
HEATSINK
VI40100C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 20 A
V_RRM
I_FSM
100 V
250 A
V_F at I_F = 20 A
0.61 V
T_J max.
150 °C
MECHANICAL DATA
Case: TO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T_J = 25 °C, L = 90 mH per diode
Peak repetitive reverse current at t_p = 2 μs, 1 kHz,
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_FSM
E_AS
I_RRM
dV/dt
T_J, T_STG
V40100C
VB40100C
100
40
20
VI40100C
250
230
1.0
10 000
- 40 to + 150
UNIT
V
A
A
mJ
A
V/μs
°C
Revision: 19-Oct-11
1
Document Number: 89042
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