V3PAN50_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Surface Mount Trench MOS Barrier Schottky Rectifier

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V3PAN50
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS^® SMPA^TM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 3.0 A (T_A = 125 °C)
T_J max.
Package
3.0 A
50 V
80 A
0.40 V
150 °C
DO-221BC (SMPA)
Diode variation
Single die
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-221BC (SMPA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Maximum DC reverse voltage
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F ⁽¹⁾
V_DC
I_FSM
Operating junction and storage temperature range
T_J, T_STG
Note
(1) _{Free air, mounted on recommended copper pad area}
V3PAN50
3N5
50
3.0
35
80
- 40 to + 150
UNIT
V
A
V
A
°C
Revision: 30-Jul-13
1
Document Number: 87909
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000