V3P6 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Trench MOS Barrier Schottky Rectifier

New Product
V3P6
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS^® eSMP^® Series
DO-220AA (SMP)
PRIMARY CHARACTERISTICS
I_F(AV)
3.0 A
V_RRM
60 V
I_FSM
60 A
V_F at I_F = 3.0 A
0.48 V
T_J max.
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F ⁽¹⁾
I_F ⁽²⁾
I_FSM
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
Notes
(1) _{Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB}
(2) _{Free air, mounted on recommended copper pad area}
V3P6
V36
60
3.0
2.4
60
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89344 For technical questions within your region, please contact one of the following:
Revision: 18-Oct-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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