V30200C_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V30200C, VF30200C, VB30200C, VI30200C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.526 V at I_F = 5A
TO-220AB
TMBS ^®
ITO-220AB
V30200C
3
2
1
PIN 1
PIN 2
PIN 3
K
TO-263AB
K
VF30200C
PIN 1
123
PIN 2
PIN 3
K
TO-262AA
K
2
1
VB30200C
PIN 1
K
PIN 2
HEATSINK
VI30200C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 15 A
T_J max.
Package
2 x 15 A
200 V
250 A
0.648 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Dual common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum



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MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30200C VF30200C VB30200C VI30200C
Maximum repetitive peak reverse voltage
V_RRM
200
Maximum average forward rectified current
(fig. 1)
per device
per diode
I_F(AV)
30
15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t_p = 2 μs, 1 kHz,
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
I_FSM
E_AS
I_RRM
dV/dt
V_AC
T_J, T_STG
250
200
0.5
10 000
1500
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 17-Aug-15
1
Document Number: 89014
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000