V30120S-E3_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.43 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
V30120S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF30120S
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TO-262AA
K
A
NC
VB30120S
NC
K
A
HEATSINK
VI30120S
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
30 A
V_RRM
120 V
I_FSM
V_F at I_F = 30 A
300 A
0.74 V
T_J max.
Package
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation
Single die
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
V_RRM
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_F(AV)
I_FSM
Non-repetitive avalanche energy at T_J = 25 °C, L = 100 mH
E_AS
Peak repetitive reverse current at t_p = 2 μs, 1 kHz, T_J = 38 °C ± 2 °C I_RRM
Voltage rate of change (rated V_R)
dV/dt
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V_AC
Operating junction and storage temperature range
T_J, T_STG
V30120S
VF30120S VB30120S
120
30
300
180
0.5
10 000
1500
-40 to +150
VI30120S
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 05-Nov-13
1
Document Number: 88974
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000