V30100P Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V30100P
New Product _{Vishay General Semiconductor}
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.57 V at I_F = 8 A
FEATURES
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
3
• High efficiency operation
2
1
• Low thermal resistance
TO-247AD (TO-3P)
• Solder Dip 260 °C, 40 seconds
PIN 1
PIN 3
PIN 2
CASE
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 15 A
T_j max.
2 x 15 A
100 V
120 A
0.65 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, Oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs Maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified (see Fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Operating junction and storage temperature range
T_J, T_STG
V30100P
100
30
15
120
- 40 to + 150
UNIT
V
A
A
°C
Document Number 88973
27-Apr-07
www.vishay.com
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