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V20PW10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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V20PW10
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
TMBS® eSMP® Series
K
1
2
SlimDPAK (TO-252AE)
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
IFSM
100 V
200 A
VF at IF = 20 A (TA = 125 °C)
0.69 V
TJ max.
150 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Single
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20PW10
Device marking code
V20PW10
Maximum repetitive peak reverse voltage
VRRM
100
Maximum average forward rectified current (Fig. 1)
IF(AV) (1)
20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Operating junction temperature range
Storage temperature range
TJ (2)
TSTG
-40 to +150
-55 to +150
Notes
(1) With infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA
UNIT
V
A
A
°C
°C
Revision: 01-Jun-17
1
Document Number: 87678
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000