V20DL45BP Datasheet, PDF (1/6 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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V20DL45BP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low V_F = 0.31 V at I_F = 5 A
TMBS ^® eSMP^® Series
SMPD
K
1
2
Top View
Bottom View
V20DL45BP
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
I_F(DC)
20 A
V_RRM
45 V
I_FSM
V_F at I_F = 20 A (T_A = 125 °C)
T_OP max. (AC model)
160 A
0.50 V
150 °C
T_J max. (DC forward current)
200 °C
Package
SMPD
Diode variations
Single die
MECHANICAL DATA
Case: SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked


MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load
V_RRM
I_F(DC) ⁽¹⁾
I_FSM
Operating junction temperature range (AC model)
Junction temperature in DC forward current without reverse bias, t =  1 h
T_OP
T_J ⁽²⁾
Note
(1) _{With heatsink}
(2) _{Meets the requirements of IEC 61215 ed.2 bypass diode thermal test}
V20DL45BP
45
20
160
-40 to +150
 200
UNIT
V
A
A
°C
°C
Revision: 18-Mar-14
1
Document Number: 87787
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000