V20120C Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.54 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
V20120C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF20120C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB20120C
PIN 1
K
PIN 2
HEATSINK
VI20120C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 10 A
T_J max.
2 x 10 A
120 V
120 A
0.64 V
150 °C
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20120C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V_AC
Operating junction and storage temperature range
T_J, T_STG
VF20120C VB20120C
120
20
10
120
1500
- 40 to + 150
VI20120C
UNIT
V
A
A
V
°C
Document Number: 89040 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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