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V12P12_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier | |||
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www.vishay.com
V12P12
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 6 A
TMBS® eSMP® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
EAS
VF at IF = 12 A
TJ max.
Package
12 A
120 V
150 A
100 mJ
0.63 V
150 °C
TO-277A (SMPC)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
FEATURES
⢠Very low profile - typical height of 1.1 mm
Available
⢠Ideal for automated placement
⢠Trench MOS Schottky technology
⢠Low forward voltage drop, low power losses
⢠High efficiency operation
⢠Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
⢠AEC-Q101 qualified availableï
- Automotive ordering code; base P/NHM3
⢠Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ï
MECHANICAL DATA
Case: TO-277A (SMPC)ï
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial gradeï
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualifiedï
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified ï
(â_Xâ denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102ï
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker testï
ï
ï
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-waveï
superimposed on rated load
Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, TJ = 25 °C
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Operating junction and storage temperature range
SYMBOL
VRRM
IF(AV)
IFSM
EAS
IRRM
TJ, TSTG
V12P12
V1212
120
12
150
100
0.5
-40 to +150
UNIT
V
A
A
mJ
A
°C
Revision: 16-Dec-14
1
Document Number: 89094
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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