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V10WM100-M3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier
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V10WM100-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.48 V at IF = 5 A
TMBS®
TO-252 (D-PAK)
K
NC
A
V10WM100
FEATURES
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
NC
K
A
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
100 V
IFSM
180 A
VF at IF = 10 A (TA = 125 °C)
TJ max.
0.58 V
150 °C
Package
TO-252 (D-PAK)
Diode variation
Single die
MECHANICAL DATA
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Operating junction and storage temperature range
TJ, TSTG
V10WM100
100
10
180
-40 to +150
UNIT
V
A
A
°C
Revision: 04-Dec-13
1
Document Number: 89971
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000