UH6PJ Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Ultrafast High Voltage Rectifier

New Product
UH6PJ
Vishay General Semiconductor
High Current Density Surface Mount
Ultrafast High Voltage Rectifier
eSMP ^TM Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
t_rr
V_F at I_F = 6.0 A
T_J max.
6.0 A
600 V
80 A
25 ns
1.59 V
175 °C
TYPICAL APPLICATIONS
For use in high voltage, high frequency power factor
corrections, switching mode power supplies,
freewheeling diodes and secondary dc-to-dc
rectification application.
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Halogen-free
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Operating junction and storage temperature range
T_J, T_STG
UH6PJ
H6PJ
600
6.0
80
- 55 to + 175
UNIT
V
A
A
°C
Document Number: 89069 For technical questions within your region, please contact one of the following:
Revision: 29-Jul-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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