UG4A-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Miniature Ultrafast Plastic Rectifiers

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UG4A-M3, UG4B-M3, UG4C-M3, UG4D-M3
Vishay General Semiconductor
Miniature Ultrafast Plastic Rectifiers
DO-201AD
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
t_rr
V_F
T_J max.
Package
4.0 A
50 V, 100 V, 150 V, 200 V
150 A
20 ns
0.95 V
150 °C
DO-201AD
Diode variations
Single die
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Operating junction and storage temperature range
T_J, T_STG
UG4A
50
35
50
UG4B UG4C
100
150
70
105
100
150
4.0
150
-55 to +150
UG4D
200
140
200
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical reverse recovery time
Typical stored charge
Typical junction capacitance
I_F = 4.0 A
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
I_F = 4.0 A, dI/dt = 50 A/μs, V_R = 30 V, 
I_rr = 10 % I_RM
I_F = 4.0 A, dI/dt = 50 A/μs, V_R = 30 V, 
I_rr = 10 % I_RM
4.0 V, 1 MHz
T_A = 25 °C
T_A = 100 °C
T_J = 25 °C
T_J = 100 °C
T_J = 25 °C
T_J = 100 °C
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
SYMBOL
V_F ⁽¹⁾
I_R
t_rr
t_rr
Q_rr
C_J
VALUE
0.95
5.0
300
20
30
50
15
30
20
UNIT
V
μA
ns
ns
nC
pF
Revision: 19-Feb-16
1
Document Number: 89431
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