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UG2F Datasheet, PDF (1/4 Pages) Gulf Semiconductor – ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:300 TO 400V CURRENT: 2.0A
New Product
UG2F, UG2G
Vishay General Semiconductor
Ultrafast Plastic Rectifier
DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
300 V, 400 V
IFSM
50 A
trr
35 ns
VF at IF = 2.0 A
0.910 V
TJ max.
150 °C
FEATURES
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AC (DO-15)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
UG2F
300
UG2G
400
2.0
50
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Maximum reverse current
Maximum reverse recovery time
Typical reverse recovery time
Typical reverse recovery current
Typical stored charge
Typical junction capacitance
IF = 1.0 A
IF = 2.0 A
TJ = 25 °C
IF = 1.0 A
IF = 2.0 A
TJ = 125 °C
Rated VR
TJ = 25 °C
TJ = 100 °C
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
4.0 V, 1 MHz
VF (1)
IR (2)
trr
trr
IRM
Qrr
CJ
0.921
1.016
0.772
0.910
1.8
108
23
31
1.7
29
10
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
1.10
-
1.02
10
200
35
-
-
-
-
Document Number: 88995 For technical questions within your region, please contact one of the following:
Revision: 23-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
UNIT
V
A
A
°C
UNIT
V
μA
ns
ns
A
nC
pF
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