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U440-E3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Matched N-Channel JFET Pairs
Matched N-Channel JFET Pairs
U440/441
Vishay Siliconix
PRODUCT SUMMARY
Part Number
U440
U441
VGS(off) (V)
–1 to –6
–1 to –6
V(BR)GSS Min (V)
–25
–25
gfs Min (mS)
4.5
4.5
IG Typ (pA)
–1
–1
jVGS1 – VGS2j Max (mV)
10
20
FEATURES
D Two-Chip Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 1 pA
D Low Noise
D High CMRR: 85 dB.
BENEFITS
APPLICATIONS
D Minimum Parasitics Ensuring Maximum
High-Frequency Performance
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
DESCRIPTION
The U440/441 are matched pairs of JFETs mounted in a single
TO-71 package. This two-chip design reduces parasitics and
gives better performance at very high frequencies while
ensuring extremely tight matching. These devices are an
excellent choice for use as wideband differential amplifiers in
demanding test and measurement applications.
The hermetically-sealed TO-71 package is available with full
military screening per MIL-S-19500 (see Military Information).
For similar products in SO-8 packaging see the
SST440/SST441 data sheet. For low-noise options, see the
SST/U401 series data sheet. For low-leakage alternatives,
see the U421/423 data sheet.
TO-71
S1
1
D1 2
G2
6
5 D2
3
G1
4
S2
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Document Number: 70251
S-04031—Rev. D, 04-Jun-01
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
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