TSKS5400_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

TSKS5400
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
14354-1
DESCRIPTION
The TSKS5400-FSZ is an infrared, 950 nm emitting diode in
GaAs technology with high radiant power, molded in a clear
plastic package.
FEATURES
• Package type: leaded
• Package form: side view lens
• Dimensions (L x W x H in mm): 5 x 2.65 x 5
• Peak wavelength: λ_p = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 30°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with detector TEKS5400
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Photointerrupters
• Transmissive sensors, gap sensors
• Reflective sensors
PRODUCT SUMMARY
COMPONENT
TSKS5400-FSZ
I_e (mW/sr)
4.5
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 30
λ_P (nm)
950
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
PACKAGING
TSKS5400-FSZ
Tape and ammopack
Note
MOQ: minimum order quantity
REMARKS
MOQ: 2000 pcs, 2000 pcs/ammopack
PACKAGE FORM
Side view lens
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Surge forward current
Power dissipation
t_p ≤ 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
6
100
2
170
100
- 25 to + 85
- 40 to + 100
260
270
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 83780
Rev. 2.3, 05-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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