TSKS5400S_13 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Infrared Emitting Diode

www.vishay.com
TSKS5400S
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
14354
DESCRIPTION
The TSKS5400S is an infrared, 950 nm emitting diode in
GaAs technology with high radiant power, molded in a clear
plastic package.
FEATURES
• Package type: leaded
• Package form: side view lens
• Dimensions (L x W x H in mm): 5 x 2.65 x 5
• Peak wavelength: λ_p = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 30°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with detector TEKS5400
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Photointerrupters
• Transmissive sensors, gap sensors
• Reflective sensors
PRODUCT SUMMARY
COMPONENT
TSKS5400S
I_e (mW/sr)
4.5
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 30
λ_p (nm)
950
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
PACKAGING
TSKS5400S
Bulk
Note
• MOQ: minimum order quantity
REMARKS
MOQ: 2000 pcs, 2000 pcs/bulk
PACKAGE FORM
Side view lens
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t_p ≤ 100 μs
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
V_R
I_F
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
6
100
2
170
100
- 25 to + 85
- 40 to + 100
260
270
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 03-Sep-13
1
Document Number: 81074
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000