TSKS5400S_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

TSKS5400S
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
14354
DESCRIPTION
The TSKS5400S is an infrared, 950 nm emitting diode in
GaAs technology with high radiant power, molded in a clear
plastic package.
FEATURES
• Package type: leaded
• Package form: side view lens
• Dimensions (L x W x H in mm): 5 x 2.65 x 5
• Peak wavelength: λ_p = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 30°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with detector TEKS5400
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Photointerrupters
• Transmissive sensors, gap sensors
• Reflective sensors
PRODUCT SUMMARY
COMPONENT
TSKS5400S
I_e (mW/sr)
4.5
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 30
λ_P (nm)
950
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
PACKAGING
TSKS5400S
Bulk
Note
MOQ: minimum order quantity
REMARKS
MOQ: 2000 pcs, 2000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Surge forward current
Power dissipation
t_p ≤ 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
PACKAGE FORM
Side view lens
VALUE
6
100
2
170
100
- 25 to + 85
- 40 to + 100
260
270
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81074
Rev. 1.6, 05-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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