TSHG6200_07 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

TSHG6200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
Description
TSHG6200 is an infrared, 850 nm emitting diode in
GaAlAs double hetero (DH) technology with high
radiant power and high speed, molded in a clear,
untinted, plastic package.
94 8389
Features
• Peak wavelength: λ_p = 850 nm
• High reliability
• High radiant power
e2
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth
• Good spectral matching to Si photodetectors
• Standard package: T-1¾ (∅ 5 mm)
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
Parts Table
Part
TSHG6200
Remarks
MOQ: 4000 pcs
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V_R
5
V
Forward current
I_F
100
mA
Peak forward current
t_p/T = 0.5, t_p = 100 µs
I_FM
200
mA
Surge forward current
t_p = 100 µs
I_FSM
1
A
Power dissipation
P_V
180
mW
Junction temperature
T_j
100
°C
Operating temperature range
T_amb
- 40 to + 85
°C
Storage temperature range
T_stg
- 40 to + 100
°C
Soldering temperature
t ≤ 5 s, 2 mm from case
T_sd
260
°C
Thermal resistance junction/
ambient
R_thJA
270
K/W
Document Number 81078
Rev. 1.6, 04-Dec-07
www.vishay.com
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