TSHG620 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

TSHG6200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double
Hetero
Description
TSHG6200 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology, molded in a
clear, untinted plastic package.
The new technology combines high speed with high
radiant power at wavelength of 850 nm.
Features
94 8390
• High modulation bandwidth
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard package T-1¾ (∅ 5 mm)
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λ_p = 850 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared radiation source for CMOS cameras
(illumination). High speed IR data transmission.
Parts Table
Part
TSHG6200
Remarks
MOQ: 4000 pc
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
V_R
5
V
Forward current
I_F
100
mA
Peak Forward Current
t_p/T = 0.5, t_p = 100 µs
I_FM
200
mA
Surge Forward Current
t_p = 100 µs
I_FSM
1
A
Power Dissipation
P_V
250
mW
Junction Temperature
T_j
100
°C
Operating Temperature Range
T_amb
- 40 to + 85
°C
Storage Temperature Range
T_stg
- 40 to + 100
°C
Soldering Temperature
t ≤ 5 sec, 2 mm from case
T_sd
260
°C
Thermal Resistance Junction/
Ambient
R_thJA
300
K/W
Basic Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
Temp. Coefficient of V_F
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 µs
I_F = 100 mA
Document Number 81078
Rev. 1.3, 08-Mar-05
Symbol
Min
Typ.
Max
Unit
V_F
1.5
1.8
V
V_F
2.3
V
TK_VF
-2.1
mV/K
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