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TSHG5510_11 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode
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TSHG5510
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm,
GaAlAs Double Hetero
21061
DESCRIPTION
TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 830 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching to Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
TSHG5510
Ie (mW/sr)
32
Note
• Test conditions see table “Basic Characteristics“
ϕ (deg)
± 38
λp (nm)
830
tr (ns)
15
ORDERING INFORMATION
ORDERING CODE
TSHG5510
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs
tp = 100 μs
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.2, 23-Aug-11
1
Document Number: 81887
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000