TSHF5410 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode in T-1 3/4 Package

TSHF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode in T-1¾ Package
Description
TSHF5410 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology, molded in a
clear, untinted plastic package.
TSHF5410 combines high speed with high radiant
power at wavelength of 890 nm.
Features
• High modulation bandwidth
• Extra high radiant power and radiant
intensity
e2
• Low forward voltage
• Suitable for high pulse current operation
• Standard package T-1¾ (∅ 5 mm)
• Angle of half intensity ϕ = ± 22°
• Peak wavelength λ_p = 890 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance with RoHS 2002/95/EC
and WEEE 2002/96/EC
94 8390
Applications
Infrared high speed remote control and free air data
transmission systems with high modulation frequen-
cies or high data transmission rate requirements.
TSHF5410 is ideal for the design of transmission sys-
tems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK - coded,
450 kHz or 1.3 MHz).
Parts Table
Part
TSHF5410
Remarks
MOQ: 4000 pcs
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
V_R
5
V
Forward Current
I_F
100
mA
Peak Forward Current
t_p/T = 0.5, t_p = 100 µs
I_FM
200
mA
Surge Forward Current
t_p = 100 µs
I_FSM
1.5
A
Power Dissipation
P_V
180
mW
Junction Temperature
T_j
100
°C
Operating Temperature Range
T_amb
- 40 to + 85
°C
Storage Temperature Range
T_stg
- 40 to + 100
°C
Soldering Temperature
t ≤ 5 sec, 2 mm from case
T_sd
260
°C
Thermal Resistance Junction/
Ambient
R_thJA
270
K/W
Document Number 81303
Rev. 1.1, 26-Oct-06
www.vishay.com
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