TSHF5400 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed IR Emitting Diode in ®5 mm (T-13/4) Package

TSHF5400
Vishay Telefunken
¾ High Speed IR Emitting Diode in ø 5 mm (T–1 ) Package
Description
94 8390
TSHF5400 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded on copper frame, in a clear, untinted plastic
package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology.
Features
D High modulation bandwidth (10 MHz)
D Extra high radiant power and radiant intensity
D Low forward voltage
D Suitable for high pulse current operation
D Standard T–1¾ (ø 5 mm) package
D Angle of half intensity ϕ = ± 22°
D Peak wavelength l_p = 870 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
TSHF5400 is ideal for the design of transmission systems according to IrDA requirements and for carrier fre-
quency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t_p/T = 0.5, t_p = 100 ms
t_p = 100 ms
xt 5sec, 2 mm from case
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
5
V
100
mA
200
mA
1.5
A
160
mW
100
°C
–40...+100 °C
–40...+100 °C
260
°C
270
K/W
Document Number 81024
Rev. 7, 02-Aug-99
www.vishay.de • FaxBack [phone]
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