TSHF4410 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

TSHF4410
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm,
GaAlAs Double Hetero
94 8636
DESCRIPTION
TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): ∅ 3
• Peak wavelength: λ_p = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f_c = 12 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• Transmission systems according to IrDA requirements and
for carrier frequency based systems (e.g. ASK/FSK -
coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
TSHF4410
I_e (mW/sr)
40
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 22
λ_P (nm)
890
t_r (ns)
30
ORDERING INFORMATION
ORDERING CODE
TSHF4410
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
Junction temperature
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
T_j
VALUE
5
100
200
1.5
180
100
UNIT
V
mA
mA
A
mW
°C
Document Number: 81276
Rev. 1.1, 16-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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