TSHA6500 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
94 8389
DESCRIPTION
The TSHA650. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λ_p = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA6500
I_e (mW/sr)
20
TSHA6501
25
TSHA6502
30
TSHA6503
35
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 24
± 24
± 24
± 24
λ_P (nm)
875
875
875
875
ORDERING INFORMATION
ORDERING CODE
TSHA6500
TSHA6501
TSHA6502
TSHA6503
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
TEST CONDITION
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
t_r (ns)
600
600
600
600
PACKAGE FORM
T-1¾
T-1¾
T-1¾
T-1¾
VALUE
5
100
200
2.5
180
UNIT
V
mA
mA
A
mW
www.vishay.com
166
For technical questions, contact: [e-mail]
Document Number: 81022
Rev. 1.7, 05-Sep-08