TSHA6200 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Infrared Emitting Diode

TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
94 8389
DESCRIPTION
The TSHA620. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λ_p = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control and free air data transmission
systems
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA6200
TSHA6201
TSHA6202
TSHA6203
I_e (mW/sr)
40
50
60
65
Note
• Test conditions see table “Basic Characteristics“
ϕ (deg)
± 12
± 12
± 12
± 12
λ_p (nm)
875
875
875
875
t_r (ns)
600
600
600
600
ORDERING INFORMATION
ORDERING CODE
TSHA6200
TSHA6201
TSHA6202
TSHA6203
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
T-1¾
T-1¾
Rev. 1.9, 24-Aug-11
1
Document Number: 81021
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000