TSHA550 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

VISHAY
TSHA550.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
The TSHA550. series are high efficiency infrared
emitting diodes in GaAlAs on GaAlAs technology,
molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs tech-
nology these high intensity emitters feature about
70 % radiant power improvement.
94 8390
Features
• Extra high radiant power
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 24 °
• Peak wavelength λ_p = 875 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control and free air transmission sys-
tems with high power and comfortable radiation angle
requirements in combination with PIN photodiodes or
phototransistors.
Because of the reduced radiance absorption in glass
at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission
range between emitter and detector.
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
V_R
5
V
Forward current
I_F
100
mA
Peak Forward Current
t_p/T = 0.5, t_p = 100 µs
I_FM
200
mA
Surge Forward Current
t_p = 100 µs
I_FSM
2.5
A
Power Dissipation
P_V
210
mW
Junction Temperature
T_j
100
°C
Operating Temperature Range
T_amb
- 55 to + 100
°C
Storage Temperature Range
T_stg
- 55 to + 100
°C
Soldering Temperature
t ≤ 5 sec, 2 mm from case
T_sd
260
°C
Thermal Resistance Junction/
Ambient
R_thJA
350
K/W
Document Number 81020
Rev. 1.3, 07-Apr-04
www.vishay.com
1