TSHA4400_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

TSHA4400, TSHA4401
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
94 8636
DESCRIPTION
The TSHA440. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λ_p = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 20°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA4400
I_e (mW/sr)
20
TSHA4401
30
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 20
± 20
λ_P (nm)
875
875
ORDERING INFORMATION
ORDERING CODE
TSHA4400
TSHA4401
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
t_r (ns)
600
600
PACKAGE FORM
T-1
T-1
VALUE
5
100
200
2
180
100
- 40 to + 85
- 40 to + 100
260
300
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81017
Rev. 1.6, 16-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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