TSHA440 Datasheet, PDF (1/5 Pages) Vishay Siliconix – GaAlAs Infrared Emitting Diodes in ®3 mm (T-1) Package

TSHA440.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1)
Package
Description
94 8398
The TSHA44..series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
50 % radiant power improvement.
Features
D Extra high radiant power
D High radiant intensity for long transmission dis-
tance
D Suitable for high pulse current operation
D Standard T–1(ø 3 mm) package for low space
application
D Angle of half intensity ϕ = ± 20°
D Peak wavelength l_p = 875 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power requirements in combination with PIN
photodiodes or phototransistors.
Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t_p/T = 0.5, t_p = 100 ms
t_p = 100 ms
xt 5sec, 2 mm from case
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
5
V
100
mA
200
mA
2
A
180
mW
100
°C
–55...+100 °C
–55...+100 °C
260
°C
450
K/W
Document Number 81017
Rev. 2, 20-May-99
www.vishay.de • FaxBack [phone]
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