TSFF5510_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero

TSFF5510
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,
GaAlAs Double Hetero
21061
DESCRIPTION
TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λ_p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f_c = 24 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high data
transmission rates
PRODUCT SUMMARY
COMPONENT
TSFF5510
I_e (mW/sr)
32
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 38
λ_p (nm)
870
ORDERING INFORMATION
ORDERING CODE
TSFF5510
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm soldered on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
t_r (ns)
15
PACKAGE FORM
T-1¾
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81835
Rev. 1.1, 16-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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