TSFF5510 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

TSFF5510
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
Description
TSFF5510 is an infrared, 870 nm emitting diode in
GaAlAs double hetero (DH) technology with high
radiant power and high speed, molded in a clear,
untinted, plastic package.
Features
• Package type: leaded
• Dimensions: T-1¾ (∅ 5 mm)
• Peak wavelength: λ_p = 870 nm
• High reliability
e2
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
21061
Applications
• Infrared video data transmission between
camcorder and TV set
• Free air data transmission systems with high
modulation frequencies or high data transmission
Product Summary
Component
TSFF5510
Symbol
φ_e
I_e
t_r, t_f
ϕ
λ_p
Value
55
32
15
± 38
870
Unit
mW
mW/sr
ns
deg
nm
Ordering Information
Ordering code
TSFF5510
Note:
MOQ: minimum order quantity
Packing
Bulk
Remarks
MOQ: 4000 pcs, 4000 pcs/bulk
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered on PCB
Symbol
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
Value
5
100
200
1
170
100
- 40 to + 85
- 40 to + 100
260
250
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81835
Rev. 1.0, 07-Feb-08
For technical support, contact: [e-mail]
www.vishay.com
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