TSFF5410_11 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode

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TSFF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
94 8390
DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: _p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f_c = 24 MHz
• Good spectral matching to Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
PRODUCT SUMMARY
COMPONENT
TSFF5410
I_e (mW/sr)
70
Note
• Test conditions see table “Basic Characteristics”
 (deg)
± 22
_p (nm)
870
ORDERING INFORMATION
ORDERING CODE
TSFF5410
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
V_R
I_F
t_p/T = 0.5, t_p = 100 μs
I_FM
t_p = 100 μs
I_FSM
P_V
t_r (ns)
15
PACKAGE FORM
T-1¾
VALUE
5
100
200
1
180
UNIT
V
mA
mA
A
mW
Rev. 1.8, 24-Aug-11
1
Document Number: 81091
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000