TSFF5410 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed IR Emitting Diode in 5 mm (T-1 3 /4) Package

VISHAY
TSFF5410
Vishay Semiconductors
High Speed IR Emitting Diode in ∅ 5 mm (T-1¾) Package
Description
TSFF5410 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
Features
94 8390
• High modulation bandwidth (23 MHz)
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 22°
• Peak wavelength λ_p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free device
Applications
Infrared video data transmission between Camcorder
and TV set.
Free air data transmission systems with high modu-
lation frequencies or high data transmission rate
requirements.
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
V_R
5
V
Forward current
I_F
100
mA
Peak Forward Current
t_p/T = 0.5, t_p = 100 µs
I_FM
200
mA
Surge Forward Current
t_p = 100 µs
I_FSM
1
A
Power Dissipation
P_V
250
mW
Junction Temperature
T_j
100
°C
Operating Temperature Range
T_amb
- 25 to + 85
°C
Storage Temperature Range
T_stg
- 25 to + 85
°C
Soldering Temperature
t ≤ 5 sec, 2 mm from case
T_sd
260
°C
Thermal Resistance Junction/
Ambient
R_thJA
300
K/W
Document Number 81091
Rev. 1.4, 23-Jun-04
www.vishay.com
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