TSFF5210 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

TSFF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
Description
TSFF5210 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
94 8390
Features
• High modulation bandwidth (23 MHz)
• Extra high radiant power and radiant
intensity
• Low forward voltage
e2
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λ_p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared video data transmission between Cam-
corder and TV set.
• Free air data transmission systems with high
modulation frequencies or high data transmission
rate requirements.
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V_R
5
V
Forward current
I_F
100
mA
Peak forward current
t_p/T = 0.5, t_p = 100 µs
I_FM
200
mA
Surge forward current
t_p = 100 µs
I_FSM
1
A
Power dissipation
P_V
250
mW
Junction temperature
T_j
100
°C
Operating temperature range
T_amb
- 40 to + 85
°C
Storage temperature range
T_stg
- 40 to + 100
°C
Soldering temperature
t ≤ 5 sec, 2 mm from case
T_sd
260
°C
Thermal resistance junction/
ambient
R_thJA
300
K/W
Document Number 81090
Rev. 1.5, 28-Nov-06
www.vishay.com
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