TSDF1920W Datasheet, PDF (1/4 Pages) Vishay Siliconix – 25 GHz Silicon NPN Planar RF Transistor

TSDF1920W
Vishay Semiconductors
25 GHz Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For RF front–ends, low noise, and wideband
applications, such as in analogue and digital cellular
and cordless phones (DECT, PHD), in TV systems
(e.g. satellite tuners), in high frequency oscillators up
to 12 GHz, in pagers and radar detectors.
Features
D Very low noise figure
D Very high power gain
D High transition frequency f_T = 24 GHz
D Low feedback capacitance
D Emitter pins are thermal leads
12
43
16712
TSDF1920W Marking: YH3
Plastic case (SOT 343R)
1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector
Absolute Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test Conditions
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient
T_amb  60 °C
on glass fibre printed board
(25 x 20 x 1.5) mm³ plated with 35 µm Cu
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_stg
R_thJA
Value
10
3.5
1.5
40
200
150
–65 to +150
450
Unit
V
V
V
mA
mW
°C
°C
K/W
Document Number 85092
Rev. 2, 02–May–02
www.vishay.com
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