TSDF1220F Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor
TSDF1220F
Vishay Semiconductors
Description
The main purpose of this bipolar transistor is broad-
band amplification up to more than 2 GHz. In the
space-saving 3-pin surface-mount SOT-490 package
electrical performance and reliability are taken to a
new level covering a smaller footprint on PC boards
than previous packages. .
In addition to space savings, the SOT-490 provides a
higher level of reliability than other 3-pin packages,
such as more resistance to moisture. Due to the short
length of its leads the SOT-490 is also reducing pack-
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Electrostatic sensitive device.
Observe precautions for handling.
age inductances resulting in some better electrical
performance. All of these aspects make this device
an ideal choice for demanding RF applications
Features
• Low power applications
• Very low noise figure
e3
• High transition frequency f_T = 12 GHz
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
For low noise applications such as preamplifiers, mix-
ers and oscillators in analog and digital TV-systems
(e.g., satellite tuners) up to microwave frequencies.
Mechanical Data
Typ: TSDF1220F
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
TSDF1220F
Marking
F2
SOT-490
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
9
V
V_CEO
6
V
V_EBO
2
V
I_C
40
mA
P_tot
200
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Document Number 85106
Rev. 1.3, 02-May-05
www.vishay.com
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